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dat a sheet product specification may 1994 discrete semiconductors bft92w pnp 4 ghz wideband transistor
may 1994 2 nxp semiconductors product specification pnp 4 ghz wideband transistor bft92w features ? high power gain ? gold metallization ensures excellent reliability ? sot323 (s-mini) package. application it is intended as a general purpose transistor for wideband applications up to 2 ghz. description silicon pnp transistor in a plastic, sot323 (s-mini) package. the bft92w uses the same crystal as the sot23 version, bft92. pinning pin description 1 base 2 emitter 3 collector marking code : w1. fig.1 sot323. handbook, 2 columns 3 12 mbc870 top view quick reference data note 1. t s is the temperature at the soldering point of the collector pin. symbol parameter condi tions min. typ. max. unit v cbo collector-base voltage open emitter ??? 20 v v ceo collector-emitter voltage open base ??? 15 v i c collector current (dc) ??? 35 ma p tot total power dissipation up to t s =93 ? c; note 1 ?? 300 mw h fe dc current gain i c = ? 15 ma; v ce = ? 10 v 20 50 ? c re feedback capacitance i c =0; v cb = ? 10 v; f = 1 mhz ? 0.5 ? pf f t transition frequency i c = ? 15 ma; v ce = ? 10 v; f = 500 mhz ? 4 ? ghz g um maximum unilateral power gain i c = ? 15 ma; v ce = ? 10 v; f = 500 mhz; t amb =25 ? c ? 17 ? db f noise figure i c = ? 5ma; v ce = ? 10 v; f = 500 mhz ? 2.5 ? db t j junction temperature ?? 150 ? c
may 1994 3 nxp semico nductors product specification pnp 4 ghz wideband transistor bft92w limiting values in accordance with the absolute maximum rating system (iec 134). thermal characteristics note to the ?limiting values? and ?thermal characteristics? 1. t s is the temperature at the soldering point of the collector pin. characteristics t j =25 ? c (unless otherwise specified). note 1. g um is the maximum unilatera l power gain, assuming s 12 is zero. symbol parameter conditions min. max. unit v cbo collector-base voltage open emitter ?? 20 v v ceo collector-emitter voltage open base ?? 15 v v ebo emitter-base voltage open collector ?? 2v i c collector current (dc) ?? 25 ma p tot total power dissipation up to t s =93 ? c; note 1 ? 300 mw t stg storage temperature ? 65 +150 ? c t j junction temperature ? 150 ? c symbol parameter conditions value unit r th j-s thermal resistance from junction to soldering point up to t s =93 ? c; note 1 190 k/w symbol parameter conditions min. typ. max. unit i cbo collector cut-off current i e =0; v cb = ? 10 v ??? 50 na h fe dc current gain i c = ? 15 ma; v ce = ? 10 v 20 50 ? f t transition frequency i c = ? 15 ma; v ce = ? 10 v; f=500mhz; t amb =25 ? c ? 4 ? ghz c c collector capacitance i e =i e =0; v cb = ? 10 v; f=1mhz ? 0.65 ? pf c e emitter capacitance i c =i c =0; v eb = ? 0.5 v; f=1mhz ? 0.75 ? pf c re feedback capacitance i c =0; v cb = ? 10 v; f=1mhz ? 0.5 ? pf g um maximum unilateral power gain; note 1 i c = ? 15 ma; v ce = ? 10 v; f=500mhz; t amb =25 ? c ? 17 ? db i c = ? 15 ma; v ce = ? 10 v; f=1ghz; t amb =25 ? c ? 11 ? db f noise figure ? s = ? opt ; i c = ? 5ma; v ce = ? 10 v; f = 500 mhz ? 2.5 ? db ? s = ? opt ; i c = ? 5ma; v ce = ? 10 v; f = 1 ghz ? 3 ? db g um 10 s 21 2 1s 11 2 ? ?? 1s 22 2 ? ?? -------------------------------------------------------- db. log =
may 1994 4 nxp semico nductors product specification pnp 4 ghz wideband transistor bft92w fig.2 power derating curve. 0 50 100 200 200 0 mlb540 150 t ( c) o s p tot (mw) 300 400 100 fig.3 dc current gain as a function of collector current, typical values. v ce = ? 10 v; t j =25 ? c. 0 60 40 20 0 10 20 mlb541 30 i (ma) c fe h fig.4 feedback capacitance as a function of collector-base voltage, typical values. i c =0; f=1mhz. 0 1 0 20 mlb542 48 v (v) cb c re (pf) 0.8 0.6 0.4 0.2 12 16 fig.5 transition frequency as a function of collector current, typical values. f=500mhz; t amb =25 ? c. 4 2 0 mlb543 6 f (ghz) 10 2 10 1 t i (ma) c v = ce 10 v 5 v
may 1994 5 nxp semico nductors product specification pnp 4 ghz wideband transistor bft92w fig.6 gain as a function of collector current, typical values. f=500mhz; v ce = ? 10 v. msg = maximum stable gain. 0 30 20 10 0 10 20 mlb544 30 gain (db) i (ma) c g um msg fig.7 gain as a function of collector current, typical values. f=1ghz; v ce = ? 10 v. msg = maximum stable gain. 0 30 20 10 0 10 20 mlb545 30 gain (db) i (ma) c msg g um fig.8 gain as a function of frequency, typical values. i c = ? 5ma; v ce = ? 10 v. msg = maximum stable gain. 50 0 10 mlb546 10 2 10 3 10 4 10 20 30 40 gain (db) f (mhz) g um msg g max fig.9 gain as a function of frequency, typical values. i c = ? 15 ma; v ce = ? 10 v. msg = maximum stable gain. 50 0 10 mlb547 10 2 10 3 10 4 10 20 30 40 gain (db) f (mhz) g um msg g max
may 1994 6 nxp semico nductors product specification pnp 4 ghz wideband transistor bft92w v ce = ? 10 v; i c = ? 15 ma. fig.10 common emitter inpu t reflection coefficient (s 11 ), typical values. mlb548 0 0 o 0.2 0.6 0.4 0.8 1.0 1.0 45 o 90 o 135 o 180 o 45 o 90 o 135 o 5 2 1 0.5 0.2 0 0.2 0.5 1 2 5 0.2 1 2 5 3 ghz 40 mhz 0.5 v ce = ? 10 v; i c = ? 15 ma. fig.11 common emitter forward transmission coefficient (s 21 ), typical values. mlb549 0 o 90 o 135 o 180 o 90 o 50 40 30 20 10 45 o 135 o 45 o 40 mhz 3 ghz
may 1994 7 nxp semico nductors product specification pnp 4 ghz wideband transistor bft92w v ce = ? 10 v; i c = ? 15 ma. fig.12 common emitter reverse transmission coefficient (s 12 ), typical values. mlb550 0 o 90 o 135 o 180 o 90 o 0.5 0.4 0.3 0.2 0.1 45 o 135 o 45 o 40 mhz 3 ghz fig.13 common emitter output reflection coefficient (s 22 ), typical values. v ce = ? 10 v; i c = ? 15 ma. mlb551 0 0 o 0.2 0.6 0.4 0.8 1.0 1.0 45 o 90 o 135 o 180 o 45 o 90 o 135 o 5 2 1 0.5 0.2 0 0.2 0.5 1 2 5 0.2 0.5 1 2 5 40 mhz 3 ghz
may 1994 8 nxp semico nductors product specification pnp 4 ghz wideband transistor bft92w fig.14 minimum noise figure as a function of collector current, typical values. v ce = ? 10 v. handbook, halfpage 2 4 2 0 10 mlb552 10 1 6 f (db) i (ma) c 1 ghz 500 mhz fig.15 minimum noise figure as a function of frequency, typical values. v ce = ? 10 v. handbook, halfpage 4 2 0 mlb553 6 f (db) f (mhz) 10 4 10 3 10 2 i = 15 ma 10 ma 5 ma 2 ma c
may 1994 9 nxp semico nductors product specification pnp 4 ghz wideband transistor bft92w fig.16 common emitter noise figu re circles, typical values. f=500mhz; v ce = ? 10 v; i c = ? 5ma; z o =50 ? . mlb554 0 0 o 0.2 0.6 0.4 0.8 1.0 1.0 45 o 90 o 135 o 180 o 45 o 90 o 135 o 5 2 1 0.5 0.2 0 0.2 0.5 1 2 5 1 2 5 f = 3 db f = 4 db f = 5 db 0.2 0.5 min f = 2.5 db opt fig.17 common emitter noise figu re circles, typical values. f=1ghz; v ce = ? 10 v; i c = ? 5ma; z o =50 ? . mlb555 0 0 o 0.2 0.6 0.4 0.8 1.0 1.0 45 o 90 o 135 o 180 o 45 o 90 o 135 o 5 2 1 0.5 0.2 0 0.2 0.5 1 2 5 1 f = 3.5 db f = 4 db f = 5 db 0.2 min opt
may 1994 10 nxp semico nductors product specification pnp 4 ghz wideband transistor bft92w spice parameters for the bft92w crystal sequence no. parameter value unit 1 is 437.5 aa 2 bf 33.58 ? 3nf1.009 ? 4vaf23.39v 5ikf99.53ma 6ise87.05fa 7ne1.943 ? 8br4.947 ? 9nr1.002 ? 10 var 3.903 v 11 ikr 5.281 ma 12 isc 35.88 fa 13 nc 1.393 ? 14 rb 5.000 ? 15 irb 1.000 ? a 16 rbm 5.000 ? 17 re 1.000 ? 18 rc 10.00 ? 19 (1) xtb 0.000 ? 20 (1) eg 1.110 ev 21 (1) xti 3.000 ? 22 cje 746.6 ff 23 vje 600.0 mv 24 mje 0.357 ? 25 tf 17.49 ps 26 xtf 1.354 ? 27 vtf 155.6 mv 28 itf 1.000 ma 29 ptf 45.00 deg 30 cjc 937.1 ff 31 vjc 396.4 mv 32 mjc 0.200 ? 33 xcjc 0.106 ? 34 tr 8.422 ns 35 (1) cjs 0.000 f note 1. these parameters have not been extracted, the default values are shown. list of component s (see fig.18) 36 (1) vjs 750.0 mv 37 (1) mjs 0.000 ? 38 fc 0.768 ? designation value unit c be 2f f c cb 100 ff c ce 100 ff l1 0.34 nh l2 0.10 nh l3 0.34 nh l b 0.60 nh l e 0.60 nh sequence no. parameter value unit ql b = 50; ql e = 50; ql b,e (f) = ql b,e ? (f/f c ); f c = scaling frequency = 1 ghz. fig.18 package equivalent circuit sot323. handbook, halfpage mbc964 b e c b' c' e' l b l e l3 l1 l2 c cb c be ce c
may 1994 11 nxp semico nductors product specification pnp 4 ghz wideband transistor bft92w package outline unit a 1 max b p cd e e 1 h e l p qw v references outline version european projection issue date iec jedec jeita mm 0.1 1.1 0.8 0.4 0.3 0.25 0.10 2.2 1.8 1.35 1.15 0.65 e 1.3 2.2 2.0 0.23 0.13 0.2 0.2 dimensions (mm are the original dimensions) 0.45 0.15 sot323 sc-70 w m b p d e 1 e a b a 1 l p q detail x c h e e v m a a b y 0 1 2 mm scale a x 12 3 plastic surface-mounted package; 3 leads sot323 04-11-04 06-03-16
may 1994 12 nxp semico nductors product specification pnp 4 ghz wideband transistor bft92w data sheet status notes 1. please consult the most recently issued document before initiating or completing a design. 2. the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. the latest pr oduct status information is available on the internet at url http://www.nxp.com. document status (1) product status (2) definition objective data sheet development this document contains data from the objective specification for product development. preliminary data sheet qualification this document contains data from the preliminary specification. product data sheet production this document contains the product specification. definitions product specification ? the information and data provided in a product data sheet shall define the specification of the product as agreed between nxp semiconductors and its customer, unless nxp semiconductors and customer have explicitly agreed otherwise in writing. in no event however, shall an agreement be valid in which the nxp semiconductors product is deemed to offer functions and qualities beyond those described in the product data sheet. disclaimers limited warranty and liability ? information in this document is believed to be accurate and reliable. however, nxp semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. in no event shall nxp semico nductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without lim itation - lost profits, lost savings, business interrup tion, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. notwithstanding any damages that customer might incur for any reason whatsoever, nxp semiconductors? aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the terms and conditions of commercial sale of nxp semi conductors. right to make changes ? nxp semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. this document supersedes and replaces all information supplied prior to the publication hereof. suitability for use ? nxp semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an nxp semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. nxp semiconductors accepts no liability for incl usion and/or use of nxp semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer?s own risk. applications ? applications that are described herein for any of these products are fo r illustrative purposes only. nxp semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. customers are responsible for the design and operation of their applications and products using nxp semiconductors products, and nxp semiconductors accepts no liability for any assi stance with ap plications or customer product design. it is customer?s sole responsibility to dete rmine whether the nxp semiconductors product is suitable and fit for the customer?s applications and products planned, as well as for the planned application and use of customer?s third party customer(s). customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products.
may 1994 13 nxp semico nductors product specification pnp 4 ghz wideband transistor bft92w nxp semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer?s applications or products, or the application or use by customer?s third party customer(s). customer is responsible for doing all necessary testing for the customer?s applications and products using nxp semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer?s third party customer(s). nxp does not accept any liability in this respect. limiting values ? stress above one or more limiting values (as defined in the absolute maximum ratings system of iec 60134) will c ause permanent damage to the device. limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the recommended operating conditions section (if present) or the characteristics sections of this document is not warranted. constant or repeat ed exposure to lim iting values will permanently and irreversibly affect the quality and reliability of the device. terms and conditions of commercial sale ? nxp semiconductors products are sold subject to the general terms and conditions of comme rcial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. in case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. nxp semiconductors hereby expressly objects to applying the customer?s general terms and conditions with regard to the purchase of nxp semiconductors products by customer. no offer to sell or license ? nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. export control ? this document as well as the item(s) described herein may be subject to export control regulations. export might require a prior authorization from national authorities. quick reference data ? the quick refere nce data is an extract of the product data given in the limiting values and characteristics sections of this document, and as such is not complete, exhaustive or legally binding. non-automotive qualified products ? unless this data sheet expressly states that this specific nxp semiconductors product is automotive qualified, the product is not suitable for automotive use. it is neither qualified nor tested in accordance with automotive testing or application requirements. nxp semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. in the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without nxp semicond uctors? warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond nxp semiconductors? specifications such use shall be solely at customer?s own risk, and (c) customer fully indemnifies nxp semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond nxp semiconductors? standard warranty and nxp semiconductors? product specifications.
nxp semiconductors provides high performance mixed signal and standard product solutions that leverage its leading rf, analog, power management, interface, security and digital processing expertise contact information for additional information please visit: http://www.nxp.com for sales offices addresses send e-mail to: salesaddresses@nxp.com ? nxp b.v. 2010 all rights are reserved. reproduction in whole or in part is prohibited without the prior written consent of the copyright owne r. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reli able and may be changed without notice. no liabilit y will be accepted by the publisher for any consequen ce of its use. publicat ion thereof d oes not con vey nor imply any license under patent- or other industrial or intellectual property rights. customer notification this data sheet was changed to reflect the new company name nxp semiconductors, including new legal definitions and disclaimers. no changes were made to the technical content, except for package outline drawings which were updated to the latest version. printed in the netherlands r77/01/pp14 date of release: may 1994

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